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Epi / Process/Device/ FA Engineer Openings
[版面:电子工程][首篇作者:lakeriver] , 2019年01月22日21:34:31 ,557次阅读,1次回复
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lakeriver
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发信人: lakeriver (), 信区: EE
标  题: Epi / Process/Device/ FA Engineer Openings
发信站: BBS 未名空间站 (Tue Jan 22 21:34:31 2019, 美东)

WinS (Shenzhen Institute of Wind bandgap Semiconductors深圳第三代半导体研究
院) is seeking the following job candidates. The R&D team consisting of
senior VPs /scientist/engineers/ with 10~20 years experiences in industry
from U.S. Candidates with semiconductor materials/device/process background
and FAB experience are highly recommended. Package is negotiable, benefits
comparable to SUSTech University(南方科技大学) 

Candidates with Ph.D from top 150 universities are qualified to get “孔雀计
划A/B/C” with 3.0 to 1.6 million RMB benefits from Shenzhen government, and
will be doubled by Longhua District government. (For example, if you get “
孔雀计划C”, you will get 3.2 million RMB in 5 years, no tax; B for 4.0
million RMB and A for 6 million RMB, respectively).

Please send your C.V. and cover letter to  [email protected]  if
interested,thanks.

1. Senior MOCVD Epi Engineer

Responsibility:
•    Responsible for the general operation of MOCVD systems and team
management.
•    Evaluate epitaxial material using the various characterization
tools.
•    Troubleshooting and resolve materials and MOCVD equipment
relatedissues.
•    Develop next-generation GaN-based UVA/Blue/Green LED Epi wafers
with shorter process time, high uniformity, high yield, high ESD tolerance,
high LOP and etc.

Qualifications:
•    MS/ME or Ph.D. (with 5+ years of applicable hands-on experience)
in Physics, Chemical Engineering, Material Science, Electrical Engineering,
or other related discipline(s).
•    5 (5+) years of direct experience with commercial MOCVD process
and equipment technology. Prior track record of GaN epitaxial material
growth is a plus.
•    Prior experience in III-V materials characterization techniques
such as: High resolution x-ray diffraction (XRD), Photoluminescence (PL),
Electroluminescence (EL), Atomic force microscopy (AFM), Ellipsometry, SIMS,
and etc. is strongly desired.
•    Experience in semiconductor manufacturing epitaxy utilizing
design of experiment (DOE), statistical process control (SPC), and
methodical data analysis for process performance improvement and structured
(root-cause) troubleshooting is essential.
•    Demonstrated proficiency in the use of statistical analysis
programs for gathering and analyzing process data related to performance
specifications, such as JMP, MiniTab.
•    A highly-motivated self-starter with ability to work
independently and a strong team player with good communication skills.
•    Ability to adapt to changing priorities, thriving on technical
challenges within and outside of core area of expertise, and to interact
effectively across multi-functional teams.


2. MOCVD Epi Engineer

Responsibility:
•    Responsible for the operation and general maintenance of MOCVD
systems.
•    Maintain SPC charts, growth databases, process sheets and
equipment logs.
•    Responsible for following safety procedures and protocols in
MOCVD lab.
•    Operate epi characterization related tools
•    Evaluate epitaxial material using the various characterization
methods.
•    Work with epi team to resolve materials and MOCVD equipment
related issues.

Qualifications:
•    Ph.D or MS/ME (with 3+ years of applicable hands-on experience)
in Physics, Chemical Engineering, Material Science, Electrical Engineering,
or other related discipline(s).
•    3 (3+) years of direct experience with commercial MOCVD process
and equipment technology. Prior track record of GaN epitaxial material
growth is a plus.
•    Prior experience in III-V materials characterization techniques
such as: High resolution x-ray diffraction (XRD), Photoluminescence (PL),
Electroluminescence (EL), Atomic force microscopy (AFM), Ellipsometry, SIMS,
and etc. is strongly desired.
•    Experience in semiconductor manufacturing epitaxy utilizing
design of experiment (DOE), statistical process control (SPC), and
methodical data analysis for process performance improvement and structured
(root-cause) troubleshooting is essential.
•    Demonstrated proficiency in the use of statistical analysis
programs for gathering and analyzing process data related to performance
specifications, such as JMP, MiniTab.
•    A highly-motivated self-starter with ability to work
independently and a strong team player with good communication skills.
•    Ability to adapt to changing priorities, thriving on technical
challenges within and outside of core area of expertise, and to interact
effectively across multi-functional teams.

3. Process & Device Engineer
Responsibility:
•    Responsible for the semiconductor process development of GaN-
based LED devices.
•    Maintain SPC charts, process databases, process sheets and
equipment logs.
•    Responsible for following safety procedures, general operation
and maintenance protocols in chip FAB.
•    Evaluate and analyze LED chip performance using various
characterization methods.
•    Work with chip team to troubleshoot and resolve process and
device related issues.

Qualifications:

•    MS/ME (with 3+ years industry experiences), Ph.D (with 1+ year
industry experience) in Physics, Chemical Engineering, Material Science,
Electrical Engineering, or other related discipline(s).
•    Experience with chip fabrication in semiconductor processing,
such as photolithography, clean, etch, thin film deposition, anneal and etc.
•    Experience working with III-V Semiconductors (GaN preferred) is
highly desirable. Prior experience in IC industry is a big plus.
•    Experience in semiconductor chip processing utilizing design of
experiment (DOE), statistical process control (SPC), and methodical data
analysis for process performance improvement and structured (root-cause)
troubleshooting is essential.
•    Demonstrated proficiency in the use of statistical analysis
programs for gathering and analyzing process data related to performance
specifications, such as JMP, MiniTab and etc.
•    A highly-motivated self-starter with ability to work
independently and a strong team player with good communication skills.
•    Ability to adapt to changing priorities, thriving on technical
challenges within and outside of core area of expertise, and to interact
effectively across multi-functional teams.


4. FA Engineer

Responsibility:
•    Responsible for the characterization of LED devices.
•    Responsible for following safety procedures and protocols in
characterization FAB.
•    Evaluate LED chip performance using the various characterization
methods.
•    Works with team to resolve process and device related issues.

Qualifications:

•    MS/ME (with 3+ years industry experiences), Ph.D (with 1+ year
industry experience) in Physics, Chemical Engineering, Material Science,
Electrical Engineering, or other related discipline(s).
•    Experience with characterization of LED devices, such as COT, LOP
, IS, L-I-V, EQE, FIB, SEM and aging test. Understand the semiconductor
optoelectronic device physics.
•    Experience in semiconductor backend processing utilizing design
of experiment (DOE), statistical process control (SPC), and methodical data
analysis for process performance improvement and structured (root-cause)
troubleshooting is essential.
•    Demonstrated proficiency in the use of statistical analysis
programs for gathering and analyzing process data related to performance
specifications, such as JMP, MiniTab and etc.
•    A highly-motivated self-starter with ability to work
independently and a strong team player with good communication skills.
•    Ability to adapt to changing priorities, thriving on technical
challenges within and outside of core area of expertise, and to interact
effectively across multi-functional teams.





--
※ 修改:·lakeriver 於 Jan 24 06:45:20 2019 修改本文·[FROM: 149.]
※ 来源:·WWW 未名空间站 网址:mitbbs.com 移动:在应用商店搜索未名空间·[FROM: 45.]

 
lakeriver
进入未名形象秀
我的博客
[回复] [回信给作者] [本篇全文] [本讨论区] [修改] [删除] [转寄] [转贴] [收藏] [举报] [ 2 ]

发信人: lakeriver (), 信区: EE
标  题: Re: Epi / Process/Device/ FA Engineer Openings
发信站: BBS 未名空间站 (Tue Feb 12 09:44:00 2019, 美东)

GaN HMET/RF/Power Electronics的相关背景也欢迎来洽谈
--
※ 来源:·WWW 未名空间站 网址:mitbbs.com 移动:在应用商店搜索未名空间·[FROM: 149.]

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